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  Datasheet File OCR Text:
 PROCESS
Small Signal Transistor
NPN - RF Transistor Chip
CP223
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,340 PRINCIPAL DEVICE TYPES 2N3866 EPITAXIAL PLANAR 22 x 22 MILS 8.0 MILS 3.5 MILS DIAMETER 3.5 x 3.5 MILS Al - 30,000A Au - 12,000A
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (1-August 2002)
Central
TM
PROCESS
CP223
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (1-August 2002)


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